S8050 transistor (npn) features power dissipation p cm : 0.625 w (tamb=25 ) collector current i cm: 0.5 a collector-base voltage v (br)cbo : 40 v operating and storage junction temperature range t j , t stg : -55 to +150 electrical characteristics (tamb=25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v(br) cbo ic= 100 a , i e =0 40 v collector-emitter breakdown voltage v(br) ceo ic= 0.1ma, i b =0 25 v emitter-base breakdown voltage v(br) ebo i e = 100 a, i c =0 5 v collector cut-off current i cbo v cb = 40v, i e =0 0.1 a collector cut-off current i ceo v ce = 20v, i b =0 0.1 a emitter cut-off current i ebo v eb = 5v, i c =0 0.1 a h fe(1) v ce = 1v, i c = 50ma 85 300 dc current gain h fe(2) v ce = 1v, i c = 500ma 50 collector-emitter saturation voltage v ce (sat) i c =500ma, i b =50 ma 0.6 v base-emitter saturation voltage v be (sat) i c =500ma, i b =50 ma 1.2 v transition frequency f t v ce = 6 v, i c =20ma f = 30mhz 150 mhz classification of h fe(1) rank b c d range 85-160 120-200 160-300 1 2 3 to-92 1. emitter 2. base 3. collector S8050 http:// www.wej.cn e-mail:wej@yongerjia.com wej electronic co. ,ltd r o hs wej electronic co.,ltd
typical characteristics base-emitter saturation voltage vs collector current 10 100 1000 0.4 0.6 0.8 1 1.2 i - collector current (ma) v - base emitter voltage (v) c besat b b = 10 - 40 oc 25 c 1 10 100 1000 50 100 150 200 250 300 i - collector current (a) h - typical pulsed current gain fe - 40 oc 25 c c v = 1v ce 125 c collector-emitter saturation voltage vs collector current 10 100 1000 0 0.1 0.2 0.3 0.4 i - collector current (ma) v - collector emitter voltage (v) c cesat b b = 10 - 40 oc 25 c 125 c base emitter on voltage vs collector current 1 10 100 1000 0 0.2 0.4 0.6 0.8 1 i - collector current (ma) v - base emitter on voltage (v) c beon v = 1v ce - 40 oc 25 c http:// www.wej.cn e-mail:wej@yongerjia.com wej electronic co. ,ltd typical pulsed current gain vs collector current S8050 r o hs wej electronic co.,ltd
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